LLC的MOSFET漏源极并联电容的作用

说法一：

滤除DS电压尖峰，高频尖峰。减小DV/DT的值，改善EMI。曾经EMC整改试过，非常有用。但是不要加的太大了，一般就是471或者102的瓷片Y，加大了LLC就实现不了ZVS了，炸机了就更不好玩了。

说法二：

As illustrated in Figs. 9–12, in wide input voltage and wide dynamic load variation ranges, the MOSFETs switching losses at turn on times are almost zero and can be ignored due to the ZVS operation. In practice, driving capability is very important to decrease turnoff switching losses. The gate-drive circuit must be able to sink MOSFETs gate-source capacitors charges and turn off them fast. If the MOSFETs “turnoff times” are sufficiently fast, then they are switched fully off before their drain-source voltages rise above zero significantly. Thus, MOSFETs drain source’s larger parasitic capacitances can play an important role for reducing the turnoff time losses.
To assist the transistor turnoff process, small capacitor may be introduced in parallel with the power MOSFETs [14].

提高效率时，在管子关断时，由于驱动能力不足，vGS下降速度太慢，Vds上升快，如果增加DS电容，使vDS上升变慢，其关断损耗减少，效率提高！

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